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Infrared Detector

Infrared Detector

Using self-developed amorphous silicon sensors and digital measurement bridge circuit, image element size 17um, with high structural reliability, good consistency, high detection sensitivity, low power consumption, etc., applied to security, monitoring, car auxiliary, cell phones, smart home and other fields.

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Features of Infrared Detector

  • 640x512 array size

  • 17 μ Pixel size of m

  • Maximum frame rate 60Hz

  • NETD ≤ 50mK (F/1, 300K, 30Hz)

  • Thermal time constant 8-10ms

  • 3.6V/1.8V power supply

  • Low power consumption<150mW

  • Fully digital interface, no need for off chip DAC/ADC

  • Operability rate>99.5%

  • Built in 14 bit column ADC

  • Support applications without TEC or blocking

  • Working temperature range -40 ° C to+65 ° C

  • 36PIN PGA ceramic packaging

  • Package size 24x24x3.9m

  • High structural reliability: the amorphous silicon sensor adopts a thermo-symmetric micro-bridge structure with independent intellectual property rights, which is structurally stable and can be used in environments with high requirements for mechanical strength.

  • Good performance consistency: The detector adopts amorphous silicon as the heat-sensitive material, with low difficulty and good consistency in the thin film process, which can effectively ensure the non-uniformity of the product.

  • High detection sensitivity: The detector adopts full-bridge measurement circuit and thermo-symmetric micro-bridge structure, realizing NETD≤50mK and thermal response time less than 10ms.

  • Fine image: It can provide high-speed and fine infrared image to meet the application requirements of large field of view.

  • Low power consumption: the detector adopts all-digital measurement circuit, low power consumption.


Application of Infrared Detector

  • Industrial temperature measurement

  • Security monitoring

  • Fire rescue

  • Car mounted night vision

  • Building inspection

  • Medical health


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